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TRANSPARENT ELECTRONICS
the device building block materials, the
semiconductor
, the electric contacts, and the dielectric
layers,
must now be invisible –

A TRUE CHALLENGE!!

touch display panels,
solar cells, flat panel
displays,
heaters,‘smart
windows’
Boom in electronic gadgets
TOUCH PANELS
Transparent Concept Phone
By BloodRabbit, which he
thought
of while driving home from
work.
its dimensions are that of a
credit card
You are probably scratching
your
head andwondering how the
electronics and other
stuff like a battery and camera
fits
in but this a very futuristic
concept phone
**CLEAR ELECTRONICS MAKE YOUR
ROOM APPEAR MORE SPACIOUS BY
ALLOWING
ELECTRONIC DEVICES TO BE
CONSOLIDATED AND STACKED IN
SMALL SPACES

**THIS TECHNOLOGY COULD ENABLE
THE WINDOWS OR MIRRORS IN OUR
HOMES
TO BE USED AS COMPUTER
MONITORS AND TELEVISION
SCREENS
Information displayed on an automobile windshield or
surfing the web on the Glass top of the coffee table
3 GOALS TO MOVE AHEAD
the first scientific goal of this technology must be to discover, understand
and implement transparent high-performance electronic materials.
The second goal is their implementation and evaluation in transistor and
circuit structures.
The third goal relates to achieving application-specific properties since
transistor performance and materials property
requirements vary, depending on the final product device specifications.
COMBINING OPTICAL TRANSPARENCY WITH
ELECTRICAL CONDUCTIVITY

*Transparent insulator possesses
completely filled
valence band and empty
conduction band.
*To become transparent

conducting oxide(TCO),these are
doped with some oxides In2O3,
SnO2, ZnO and CdO to displace
fermi level near to the conduction
band
TRANSPARENT ELECTRONIC DEVICES

These devices must be
chosen,designed ,fabricated and
interconnected inorder to construct
circuits which have to be
simulated and build in such a way that
they function appropriately
with other circuits
DEVICES CIRCUITS SYSTEMS
PASSIVE LINEAR DEVICES
*Passive device absorb energy, in
contrast to an active device which
is capable of controlling the flow of
energy
*a linear device is distinguished by the
fact that its input and output
characterstics can be described using
linear mathematical relationship
*the three passive linear devices are:
**RESISTORS
**CAPACITORS
**INDUDCTORS
RESISTORS

a)plan-view of linear
transparent thin-film
resistor(TTFR)
b)A meander TTFR

c) cross-section view of
TTFR
CAPACITORS
*TheTTFC capacitance is
established by the capacitance
density, i.e., the capacitance
per unit area,
*a large capacitance density
is desired, in order to minimize
the size of a capacitor.

* reducing the insulator
thickness alsoincreases the
capacitance density
INDUCTORS
*The quality factor, Q,
is basically an inductor
performance figure-of-merit.
A larger Q is better.
*Inductors are useful in resonant
circuits and filters.
limiting current fluctuations
energy storage devices for
switched-mode power supplies
*TTFI with good performance appears
to be difficult to construct and still
challenging
TRANSPARENT THIN-FILM TRANSISTORS(TTFTs)
TTFTs constitute the heart of transparent electronics

a) staggered, bottom-gate since
source-drain
and gate contacts
are located at the top and bottom
of the device
b) shows a coplanar, top-gate
structure in which the sourcedrain and thegate are all
positioned on the top side of the
TTFT
Ideal n-channel transparent thin
-film transistor (TTFT) operation
(a) Cut- off. Zero drain current
(I D =0)
which is defined by V GS <V ON
(b) Linear, pre-pinch-off.
I D is described by Ohm’s law
[I D =V DS / R C (V GS )] at
low V DS [V DS <<V GS -V ON ]
(c) Nonlinear, pre-pinch-off and,
post- pinch-off, saturation
V DS =V GS -V ON because of the
depletion or ‘pinch- off’
ADVANCEMENTS IN TECHNOLOGY
* TRRAM(transparent resistive random access memory),like cmos device
that provides non-volatile memory means data don't get lost when power is off
*TRRAM device is based on an ITO(indium tin oxide) capacitor structure which
provides a transmittance of 81%in the visible region of the chip. the data
retention is expected to be about 10 years
*RRAM is referred to as “memristor” which could be a new technology where
computer memory is based on resistance instead of electric
which flash memory depends.

charge on

*products using these approach could become more smaller,faster and cheaper
than silicon transistors
Flash memory
Flash memory can erase its
data in entire blocks, ease in
frequent updating
of large amounts of data,
Inside the flash chip,

information is stored in
cells. Tunneling electrons pass
through a low conductive
material to change the
electronic charge of the gate
"in a flash," clearing the cell
of its contents so that it can be
rewritten. This is how flash
memory gets its name.
The first memory chip “Memristor” mimics
the brain,Future flash memory.
*Whose electrical resistance
changes when voltage is
applied.ReRAM is based on
materials
*ReRAM significantly stores more
memory and demans less energy
and space to store data.It is far
more advanced than the current
technology.
*does not depend on the diffusion
of metallic ions to form conductive
paths.
RRAM v/s flash memory
*its resistance changes depending on
how much current has passed through it
it “remembers” that value
even after power is turned off.
*“We’re reaching the limits of what
we can do with flash memory in terms of
increasing the storage density,
and it’s also relatively high power
and not as fast as we would like
*“Memristor memory chips promise to
run at least 10 times faster and use 10
times less power than an equivalent Flash
memory chip,
MEMRISTOR
Continuously variable
resistance that
depends on the last
voltage that was
applied.
This is an important
property that allows the
device to mimic how
neurons in the brain
function.
Devices that operate in
this way are known as
‘memristors’.
RECENT DISCOVERIES
*its introduction in 1988 by Toshiba, NAND flash nonvolatile memory
has scaled to 1x-nm feature sizes, shrinking cell sizes reduce the
number of electronsstored on the floating gate. RRAM provides an alternative.
*in march 2003,researchers at Oregon State University(OSU) builts
the world’s First transparent transistor

*A group of scientists at Korea Advanced Institute Of Science
And Technology (KAIST) had fabricated a working computer chip
that is almost transparent in Dec,2008
*hewletl-packard is the first company which is gonna to to use RRAM
TECHNOLOGY in its products from this july
A NEW REVOLUTION
FUTURE SCOPE
The team are also exploring
using the resistance properties
of their material not just for use
in memory but also as a
computer processor.This
versatility will someday replace
memory and central processing
units(CPUs)with a single chip
that can perform both
functions.

much progress has beenmade in developing new materials and devices for high
performance transparentsolar cells, there is still plenty of opportunity to study and
improve deviceperformance and fabrication techniques compared with the
nontransparent solarcell devices.
FUTURE GADGETS
What we see in science fiction movies are going to be a real working
technology and it is not very far,Competition in the world of technology
brings us suprising stuffs that we once dreamed of.

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Transparent electronics by kirti kansal

  • 2. the device building block materials, the semiconductor , the electric contacts, and the dielectric layers, must now be invisible – A TRUE CHALLENGE!! touch display panels, solar cells, flat panel displays, heaters,‘smart windows’
  • 5. Transparent Concept Phone By BloodRabbit, which he thought of while driving home from work. its dimensions are that of a credit card You are probably scratching your head andwondering how the electronics and other stuff like a battery and camera fits in but this a very futuristic concept phone
  • 6. **CLEAR ELECTRONICS MAKE YOUR ROOM APPEAR MORE SPACIOUS BY ALLOWING ELECTRONIC DEVICES TO BE CONSOLIDATED AND STACKED IN SMALL SPACES **THIS TECHNOLOGY COULD ENABLE THE WINDOWS OR MIRRORS IN OUR HOMES TO BE USED AS COMPUTER MONITORS AND TELEVISION SCREENS
  • 7.
  • 8. Information displayed on an automobile windshield or surfing the web on the Glass top of the coffee table
  • 9. 3 GOALS TO MOVE AHEAD the first scientific goal of this technology must be to discover, understand and implement transparent high-performance electronic materials. The second goal is their implementation and evaluation in transistor and circuit structures. The third goal relates to achieving application-specific properties since transistor performance and materials property requirements vary, depending on the final product device specifications.
  • 10.
  • 11. COMBINING OPTICAL TRANSPARENCY WITH ELECTRICAL CONDUCTIVITY *Transparent insulator possesses completely filled valence band and empty conduction band. *To become transparent conducting oxide(TCO),these are doped with some oxides In2O3, SnO2, ZnO and CdO to displace fermi level near to the conduction band
  • 12. TRANSPARENT ELECTRONIC DEVICES These devices must be chosen,designed ,fabricated and interconnected inorder to construct circuits which have to be simulated and build in such a way that they function appropriately with other circuits DEVICES CIRCUITS SYSTEMS
  • 13. PASSIVE LINEAR DEVICES *Passive device absorb energy, in contrast to an active device which is capable of controlling the flow of energy *a linear device is distinguished by the fact that its input and output characterstics can be described using linear mathematical relationship *the three passive linear devices are: **RESISTORS **CAPACITORS **INDUDCTORS
  • 14. RESISTORS a)plan-view of linear transparent thin-film resistor(TTFR) b)A meander TTFR c) cross-section view of TTFR
  • 15.
  • 16. CAPACITORS *TheTTFC capacitance is established by the capacitance density, i.e., the capacitance per unit area, *a large capacitance density is desired, in order to minimize the size of a capacitor. * reducing the insulator thickness alsoincreases the capacitance density
  • 17.
  • 18. INDUCTORS *The quality factor, Q, is basically an inductor performance figure-of-merit. A larger Q is better. *Inductors are useful in resonant circuits and filters. limiting current fluctuations energy storage devices for switched-mode power supplies *TTFI with good performance appears to be difficult to construct and still challenging
  • 19. TRANSPARENT THIN-FILM TRANSISTORS(TTFTs) TTFTs constitute the heart of transparent electronics a) staggered, bottom-gate since source-drain and gate contacts are located at the top and bottom of the device b) shows a coplanar, top-gate structure in which the sourcedrain and thegate are all positioned on the top side of the TTFT
  • 20. Ideal n-channel transparent thin -film transistor (TTFT) operation (a) Cut- off. Zero drain current (I D =0) which is defined by V GS <V ON (b) Linear, pre-pinch-off. I D is described by Ohm’s law [I D =V DS / R C (V GS )] at low V DS [V DS <<V GS -V ON ] (c) Nonlinear, pre-pinch-off and, post- pinch-off, saturation V DS =V GS -V ON because of the depletion or ‘pinch- off’
  • 21. ADVANCEMENTS IN TECHNOLOGY * TRRAM(transparent resistive random access memory),like cmos device that provides non-volatile memory means data don't get lost when power is off *TRRAM device is based on an ITO(indium tin oxide) capacitor structure which provides a transmittance of 81%in the visible region of the chip. the data retention is expected to be about 10 years *RRAM is referred to as “memristor” which could be a new technology where computer memory is based on resistance instead of electric which flash memory depends. charge on *products using these approach could become more smaller,faster and cheaper than silicon transistors
  • 22. Flash memory Flash memory can erase its data in entire blocks, ease in frequent updating of large amounts of data, Inside the flash chip, information is stored in cells. Tunneling electrons pass through a low conductive material to change the electronic charge of the gate "in a flash," clearing the cell of its contents so that it can be rewritten. This is how flash memory gets its name.
  • 23. The first memory chip “Memristor” mimics the brain,Future flash memory. *Whose electrical resistance changes when voltage is applied.ReRAM is based on materials *ReRAM significantly stores more memory and demans less energy and space to store data.It is far more advanced than the current technology. *does not depend on the diffusion of metallic ions to form conductive paths.
  • 24. RRAM v/s flash memory *its resistance changes depending on how much current has passed through it it “remembers” that value even after power is turned off. *“We’re reaching the limits of what we can do with flash memory in terms of increasing the storage density, and it’s also relatively high power and not as fast as we would like *“Memristor memory chips promise to run at least 10 times faster and use 10 times less power than an equivalent Flash memory chip,
  • 25. MEMRISTOR Continuously variable resistance that depends on the last voltage that was applied. This is an important property that allows the device to mimic how neurons in the brain function. Devices that operate in this way are known as ‘memristors’.
  • 26. RECENT DISCOVERIES *its introduction in 1988 by Toshiba, NAND flash nonvolatile memory has scaled to 1x-nm feature sizes, shrinking cell sizes reduce the number of electronsstored on the floating gate. RRAM provides an alternative. *in march 2003,researchers at Oregon State University(OSU) builts the world’s First transparent transistor *A group of scientists at Korea Advanced Institute Of Science And Technology (KAIST) had fabricated a working computer chip that is almost transparent in Dec,2008 *hewletl-packard is the first company which is gonna to to use RRAM TECHNOLOGY in its products from this july
  • 28. FUTURE SCOPE The team are also exploring using the resistance properties of their material not just for use in memory but also as a computer processor.This versatility will someday replace memory and central processing units(CPUs)with a single chip that can perform both functions. much progress has beenmade in developing new materials and devices for high performance transparentsolar cells, there is still plenty of opportunity to study and improve deviceperformance and fabrication techniques compared with the nontransparent solarcell devices.
  • 29.
  • 31. What we see in science fiction movies are going to be a real working technology and it is not very far,Competition in the world of technology brings us suprising stuffs that we once dreamed of.